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H5N5005PL

Hitachi
Part Number H5N5005PL
Manufacturer Hitachi
Description Silicon N-Channel MOSFET
Published Mar 13, 2006
Detailed Description H5N5005PL Silicon N Channel MOS FET High Speed Power Switching ADE-208-1382 (Z) Target Specification 1st. Edition Mar. ...
Datasheet PDF File H5N5005PL PDF File

H5N5005PL
H5N5005PL

Overview
H5N5005PL Silicon N Channel MOS FET High Speed Power Switching ADE-208-1382 (Z) Target Specification 1st.
Edition Mar.
2001 Features • • • • • • Low on-resistance: R DS(on) = 0.
064 typ.
Low leakage current: IDSS = 10 µA max (at VDS = 500 V) High speed switching: tf = 300 ns typ (at VGS = 10 V, VDD = 250 V, ID = 30 A) Low gate charge: Qg = 300 nC typ (at VDD = 400 V, VGS = 10 V, ID = 60 A) Avalanche ratings Built-in fast recovery diode: trr = 220 ns typ Outline TO-3PL w w .
D w G t a D S S a 1 2 e h 3 t e U 4 .
c m o 1.
Gate 2.
Drain (Flange) 3.
Source w w w .
D a S a t e e h U 4 t m o .
c H5N5005PL Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes: 1.
PW 10 µs, duty cycle 1% 2.
Value at Tc = 25°C 3.
Tch 150°C Symbol VDSS VGSS ID ID Note1 (pulse) Ratings 500 ±30 60 240 60 Unit V V A A A A A W °C/W °C °C I DR I DR Note1 (pulse) 240 18 270 0.
463 150 –55 to +150 I AP Note3 Pch Note2 θ ch-c Tch Tstg 2 H5N5005PL Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS I GSS 500 — — 2.
0 — 30 — — — — — — — — — — — — — Typ — — — — 0.
064 50 10550 1060 180 115 380 560 300 300 40 155 1.
05 220 2.
0 Max — ±0.
1 10 4.
0 0.
075 — — — — — — — — — — — 1.
6 — — S pF pF pF ns ns ns ns nC nC nC V ns µC Unit V µA µA V Test Conditions I D = 10 mA, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 500 V, VGS = 0 VDS = 10 V, ID = 1 mA I D = 30 A, VGS = 10 V Note4 I D = 30 A, VDS = 10 V Note4 VDS = 25 V VGS = 0 f = 1 MHz I D = 30 A VGS = 10 V RL = 8.
33 Rg = 10 VDD = 400 V VGS = 10 V I D = 60 A I F = 60 A, VGS = 0 I F = 60 A, VGS = 0 diF/dt = 100 A/µs Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on stat...


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