Ordering number : ENN6934 CPH6312 P-Channel Silicon MOSFET CPH6312 High-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2151A [CPH6312] 6 5 4 0.
6 0.
05 1.
6 2.
8 0.
2 2.
9 0.
15 Low ON-resistance.
High-speed switching.
4V drive.
1 2 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.
8mm) Conditions 0.
4 0.
7 0.
9 0.
2 3 0.
95 0.
6 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO :...

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