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CPH6312

Sanyo Semicon Device
Part Number CPH6312
Manufacturer Sanyo Semicon Device
Description High-Speed Switching Applications
Published Mar 23, 2005
Detailed Description Ordering number : ENN6934 CPH6312 P-Channel Silicon MOSFET CPH6312 High-Speed Switching Applications Preliminary Featu...
Datasheet PDF File CPH6312 PDF File

CPH6312
CPH6312

Overview
Ordering number : ENN6934 CPH6312 P-Channel Silicon MOSFET CPH6312 High-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2151A [CPH6312] 6 5 4 0.
6 0.
05 1.
6 2.
8 0.
2 2.
9 0.
15 Low ON-resistance.
High-speed switching.
4V drive.
1 2 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.
8mm) Conditions 0.
4 0.
7 0.
9 0.
2 3 0.
95 0.
6 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 Ratings -30 ± 20 --5 -20 1.
6 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resist...


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