TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS417
1SS417
High Speed Switching Application
• Small package • Low forward
voltage: VF (3) = 0.
56V (typ.
) • Low reverse current: IR = 5μA (Max.
)
0.
1
0.
6±0.
05
Unit: mm A
CATHODE MARK
1.
0±0.
05
0.
8±0.
05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
0.
2 ±0.
05 0.
07 M A
0.
1
0.
1±0.
05
Maximum (peak) reverse
voltage Reverse
voltage
VRM VR
45 V 40 V
0.
48
+0.
02 -0.
03
Maximum (peak) forward current IFM 200 mA
Average forward current
IO 100 mA
Surge current (10ms)
IFSM
1A
Power dissipation Junction temperature
P * 100 mW
fSC
Tj 125 °C
Storage temperature range Operating temperature range
Tstg
...