TOSHIBA Diode Silicon Epitaxial Planar Type
1SS426
Ultra-High Speed Switching Applications
z Compact 2-pin package: Ideal for high-density mounting
z Low forward
voltage
: VF (3) = 0.
98 V (typ.
)
z Fast reverse recovery time : trr = 1.
6 ns (typ.
)
z Small total capacitance : CT = 0.
5 pF (typ.
)
1SS426
Unit: mm
CATHODE MARK
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse
voltage Reverse
voltage Maximum (peak) forward current Average forward current Surge current (10 ms) Power dissipation Junction temperature Storage temperature
VRM VR IFM IO IFSM P Tj Tstg
85 80 200 100 1 150 * 150 −55 to 150
V V mA mA A mW °C °C
JEDEC
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JEITA
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