SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES Low Leakage Current : ICEX=-50nA(Max.
), IBL=-50nA(Max.
) @VCE=-30V, VEB=-3V.
Excellent DC Current Gain Linearity.
Low Saturation
Voltage : VCE(sat)=-0.
4V(Max.
) @IC=-50mA, IB=-5mA.
Low Collector Output Capacitance : Cob=4.
5pF(Max.
) @VCB=5V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Total Rating
VCBO VCEO VEBO
IC IB PC Tj Tstg
RATING -40 -40 -5 -200 -50 200 150
-55 150
UNIT V V V mA mA mW
H
A A1 CC
2N2906E
EPITAXIAL P...