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2N2906A

Part Number	2N2906A
Manufacturer	VPT
Description	Radiation Hardened PNP Transistors
Published	Oct 28, 2019
Detailed Description	2N2906A, L, UA, UB 2N2907A, L, UA, UB Radiation Hardened PNP Silicon Switching Transistors Features • Qualified to MIL-P...
Datasheet	2N2906A PDF File

Overview

2N2906A, L, UA, UB 2N2907A, L, UA, UB Radiation Hardened PNP Silicon Switching Transistors Features • Qualified to MIL-PRF-19500/291 • Available in JAN, JANTX, JANTXV, JANS and JANSR • Rad Hard Levels M, D, P, L and R • TO-18, Surface Mount UA & UB Packages Applications • Switching and Linear Applications • DC and VHF Amplifier Applications Rev.
V3 Electrical Specifications (TA = 25°C unless otherwise specified) Parameter Test Conditions Symbol Units Minimum Maximum Collector - Emitter Breakdown Collector - Base Cutoff Current Emitter - Base Cutoff Current Collector - Emitter Cutoff Current IC = -10 mA dc VCB = -60 V dc VCB = -50 V dc VEB = -5.
0 V dc VEB = -4.
0 V dc VCE = -50 V dc V(BR)CEO V dc ICBO1 ICBO2 IEBO1 IEBO2 µA dc nA dc µA dc nA dc ICES nA dc -60 — — — — -10 -10 -10 -50 -50 Forward Current Transfer Ratio Collector - Base Cutoff Current Base - Emitter Saturation Voltage Collector - Base Cutoff Current Forward Current Transfer Ratio 1 2N2906A, L, UA, UB VCE = -10...

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