2N5401
Amplifier Transistors
PNP Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector − Emitter
Voltage Collector − Base
Voltage Emitter − Base
Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C
VCEO VCBO VEBO
IC PD
150 Vdc 160 Vdc 5.
0 Vdc 600 mAdc 625 mW 5.
0 mW/°C
Total Device Dissipation @ TC = 25°C PD 1.
5 W
Derate above 25°C
12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.
3 °C/W
Stresses exceedin...