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2N5401

Fairchild Semiconductor
Part Number 2N5401
Manufacturer Fairchild Semiconductor
Description PNP General Purpose Amplifier
Published Mar 22, 2005
Detailed Description 2N5401 / MMBT5401 Discrete POWER & Signal Technologies 2N5401 MMBT5401 C E C BE TO-92 SOT-23 Mark: 2L B PNP Gene...
Datasheet PDF File 2N5401 PDF File

2N5401
2N5401

Overview
2N5401 / MMBT5401 Discrete POWER & Signal Technologies 2N5401 MMBT5401 C E C BE TO-92 SOT-23 Mark: 2L B PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages.
Sourced from Process 74.
Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 150 160 5.
0 200 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5401 625 5.
0 83.
3 200 Max *MMBT5401 350 2.
8 357 Units mW mW/ °C °C/W °C/W *Device mounted on FR-4 PCB 1.
6" X 1.
6" X 0.
06.
" © 1997 Fairchild Semiconductor Corporation 2N5401 / MMBT5401 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current I C = 1.
0 mA, IB = 0 I C = 100 µA, I E = 0 I E = 10 µA, I C = 0 VCB = 120 V, IE = 0 VCB = 120 V, IE = 0, TA = 100°C VEB = 3.
0 V, IC = 0 150 160 5.
0 50 50 50 V V V nA µA nA ON CHARACTERISTICS* hFE DC Current Gain I C = 1.
0 mA, VCE = 5.
0 V I C = 10 mA, VCE = 5.
0 V I C = 50 mA, VCE = 5.
0 V I C = 10 mA, IB = 1.
0 mA I C ...


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