SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
HIGH
VOLTAGE APPLICATION.
FEATURES High Collector Breakdwon
Voltage : VCBO=180V, VCEO=160V Low Leakage Current.
: ICBO=50nA(Max.
), VCB=120V Low Saturation
Voltage : VCE(sat)=0.
2V(Max.
), IC=50mA, IB=5mA Low Noise : NF=8dB (Max.
)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
VCBO VCEO VEBO
IC IB PC Tj Tstg
RATING 180 160 6 600 100 625 150
-55 150
UNIT V V V mA mA mW
L M
C
2N5551C
EPITAXIAL PLANAR NPN TRANSISTOR
BC
JA
KE G
D
H
FF
1 23
N DIM MILLIMETERS...