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2N5551S

KEC
Part Number 2N5551S
Manufacturer KEC
Description EPITAXIAL PLANAR NPN TRANSISTOR
Published Jun 21, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Vo...
Datasheet PDF File 2N5551S PDF File

2N5551S
2N5551S

Overview
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION.
HIGH VOLTAGE APPLICATION.
FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current.
: ICBO=50nA(Max.
) VCB=120V Low Saturation Voltage : VCE(sat)=0.
2V(Max.
) IC=50mA, IB=5mA Low Noise : NF=8dB (Max.
) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 180 Collector-Emitter Voltage VCEO 160 Emitter-Base Voltage VEBO 6 Collector Current IC 600 Base Current IB 100 Collector Power Dissipation PC * 350 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : * Package Mounted On 99.
5% Alumina 10 8 0.
6 ) UNIT V V V mA mA mW 2N5551S EPITAXIAL PLANAR NPN TRANSISTOR E L BL DIM MILLIMETERS A 2.
93+_ 0.
20 B 1.
30+0.
20/-0.
15 A G H D 23 C 1.
30 MAX D 0.
40+0.
15/-0.
05 E 2.
40+0.
30/-0.
20 1 G 1.
90 H 0.
95 J 0.
13+0.
10/-0.
05 Q K 0.
00 ~ 0.
10 PP L 0.
55 M 0.
20 MIN N 1.
00+0.
20/-0.
10 C N K J P7 Q 0.
1 MAX M 1.
EMITTER 2.
BASE 3.
COLLECTOR SOT-...


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