TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1160
Strobe Flash Applications Medium Power Amplifier Applications
2SA1160
Unit: mm
• High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.
5 A) : hFE (2) = 60 (min), 120 (typ.
) (VCE = −1 V, IC = −4 A)
• Low saturation
voltage
: VCE (sat) = −0.
5 V (max) (IC = −2 A, IB = −50 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage
Collector-emitter
voltage
Emitter-base
voltage
Collector current
DC Pulsed (Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB PC Tj Tstg...