TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA965
Power Amplifier Applications Driver-Stage Amplifier Applications
2SA965
Unit: mm
• Complementary to 2SC2235.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage
VCBO
−120
V
Collector-emitter
voltage
VCEO
−120
V
Emitter-base
voltage
VEBO
−5
V
Collector current
IC
−800
mA
Base current
IB
-80
mA
Collector power dissipation
PC
900
mW
Junction temperature Storage temperature range
Tj
150
°C
Tstg
−55 to 150
°C
JEDEC
TO-92MOD
Note1: Using continuously under heavy loads (e.
g.
the application of high
JEITA
―
temperature/current/
voltage and the signi...