| Part Number | 2SB1252 |
| Manufacturer | Panasonic Semiconductor |
| Title | Silicon PNP epitaxial planar type Transistor |
| Description | Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1892 10.0±0.2 5.5±0.2 2.7±0.2 ... |
| Features |
q q q q
0.7±0.1
14.0±0.5
Optimum for 35W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): 2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings –120 –100 –5 –8 –5 45 2 150 –55 to +15... |
| File Size | 75.24KB |
| Datasheet |
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2SB1259 : isc Silicon PNP Darlington Power Transistor 2SB1259 DESCRIPTION ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -4V, IC= -5A) ·Large Current Capability ·Complement to Type 2SD2081 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Driver for solenoid,relay and motor and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A ICM Collector Current-Pulse -15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temp.
2SB1259 : Darlington 2SB1259 (3 k Ω)(1 0 0Ω) E B Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2081) Application : Driver for Solenoid, Relay and Motor and General Purpose sAbsolute maximum ratings Symbol Ratings VCBO –120 VCEO –120 VEBO –6 IC –10(Pulse–15) IB –1 PC 30(Tc=25°C) Tj 150 Tstg –55 to +150 (Ta=25°C) Unit V V V A A W °C °C sElectrical Characteristics Symbol Conditions ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB VCB=–120V VEB=–6V IC=–10mA VCE=–4V, IC=–5A IC=–5A, IB=–10mA IC=–5A, IB=–10mA VCE=–12V, IE=0.2A VCB=–10V, f=1MHz sTypical Switching Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 (V) (Ω) (A) (V.
2SB1258 : isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 1000(Min)@IC= -3A ·Complement to Type 2SD1785 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Driver for solenoid, relay and motor and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -100 V -100 V -6 V IC Collector Current-Continuous ICP Collector Current-Pulse -6 A -10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ J.
2SB1258 : SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1258 DESCRIPTION ·With TO-220F package ·Complement to type 2SD1785 ·High DC current gain ·DARLINGTON APPLICATIONS ·Driver for solenoid ,relay and motor and general purpose PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CO.
2SB1258 : (3 k Ω)(1 0 0 Ω) E Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1258 –100 –100 –6 –6(Pulse–10) –1 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SB1258 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=–100V VEB=–6V IC=–10mA VCE=–2V, IC=–3A IC=–3A, IB=–6mA IC=–3A, IB=–6mA VCE=–12V, IE=0.2A VCB=–10V, f=1MHz 2SB1258 –10max –10max –100min 1000min –1.5max –2max 100typ 100typ V V MHz pF 13.0min B Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD1785) Application : Driver for Solenoid, Relay and Motor and General Purpose (Ta=25°C) Unit External Dimensions FM20(T.