isc
Silicon PNP Darlington
Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= -100V(Min) ·High DC Current Gain-
: hFE= 1000(Min)@IC= -3A ·Complement to Type 2SD1785 ·Minimum Lot-to-Lot variations for robust device
perform...