SMD Type
Transistors
PNP Epitaxial Planar Silicon Transistors 2SB1302
Features
Adoption of FBET, MBIT processes.
Low collector-to-emitter saturation
voltage.
Large current capacity.
Fast switching speed.
Very small size making it easy to provide highdensity, small-sized hybrid ICs.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -25 -20 -5 -5 -8 1.
3 150 -55 to +150 Unit V V V A A W
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SMD Type
2SB1302
Electrical ...