isc Silicon PNP Power Transistor
2SB507
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= -60V(Min) ·Low Collector-Emitter Saturation
Voltage-
: VCE(sat)= -1.
0V(Max) @IC= -2.
0A ·Complement to Type 2SD313 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for the output stage of 15W to 25W AF power
amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-60
V
VCEO
Collector-Emitter
Voltage
-60
V
VEBO
Emitter-Base
Voltage
-5.
0
V
IC
Collector Current-Continuous
-3.
0
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperatu...