isc Silicon PNP Power Transistor
2SB813
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for AF power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-60
V
VCEO
Collector-Emitter
Voltage
-60
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-8
A
40
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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