isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= -100V(Min) ·Low Collector Saturation
Voltage-
: VCE(sat)= -2.
0V(Max)@ IC= -4A ·Complement to Type 2SD1355 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications.
·Recommended for 30W high-fidelity audio frequency
amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base
Voltage
-100
V
VCEO
Collector-Emitter
Voltage
-100
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
-5
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ...