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2SB995

Part Number	2SB995
Manufacturer	Toshiba
Description	SILICON PNP TRANSISTOR
Published	Jul 17, 2018
Detailed Description	: 2SB995 SILICON PIMP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES . High Breakdown Voltage : VCEq=-100...
Datasheet	2SB995 PDF File

Overview

: 2SB995 SILICON PIMP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS.
FEATURES .
High Breakdown Voltage : VCEq=-100V .
Low Collector-Emitter Saturation Voltage : V C E(sat)=-2.
0V(Max.
) .
Complementary to 2SD1355 .
Recommended for 30W High-Fidelity Audio Frequency Amplifier Output Stage.
Unit in mm MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO VEBO ic IB PC Lstg RATING -100 -100 -5 -5 -0.
5 UNIT 40 150 -55-150 1.
BASE 2.
COLLECTOR (HEAT SINK) a EMITTER TOSHIBA 2-10K1A Weight : 2.
1 ...

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