DATA SHEET
SILICON TRANSISTOR
2SC2721
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-FREQUENCY
AMPLIFIERS AND MID-SPEED SWITCHING
FEATURES • Complementary transistor with 2SA1154 • High PT in small dimension and high
voltage
PT = 1 W, VCEO = 60 V
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature
VCBO VCEO VEBO IC(DC) IC(pulse)* PT
Tj Tstg
* PW ≤ 10 ms, duty cycle ≤ 50%
Ratings 60 60 5.
0 0.
7 1.
0 1 150
−55 to +150
Unit V V V A A W °C °C
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (T...