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2SC2723

Part Number	2SC2723
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 28, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2723 DESCRIPTION ·High Collector-Emitter Breakdown Voltage-...
Datasheet	2SC2723 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2723 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 10 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak( Pulse) 30 A IB Base Current-Continuous PC Collector Power Dissipation @...

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