DATA SHEET
SILICON TRANSISTOR
2SC3587
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
The 2SC3587 is an NPN epitaxial transistor designed for lownoise amplification at 0.
5 to 6.
0 GHz.
This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.
PACKAGE DIMENSIONS (in mm)
E
3.
8 MIN.
FEATURES
• Low noise : NF = 1.
7 dB TYP.
@ f = 2 GHz
C
3.
8 MIN.
3.
8 MIN.
B
NF = 2.
6 dB TYP.
@ f = 4 GHz • High power gain : GA = 12.
5 dB TYP.
@ f = 2 GHz GA = 8.
0 dB TYP.
@ f = 4 GHz
3.
8 MIN.
45 °
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER Collector to Base
Voltage Collector to Emitter
Voltage Emitter to Base Volt...