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2SC3588

Part Number	2SC3588
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Nov 25, 2020
Detailed Description	isc Silicon NPN Power Transistor 2SC3588 DESCRIPTION ·Low Collector Saturation Voltage- VCE(sat)= 0.5V(Max)@ IC= 300mA...
Datasheet	2SC3588 PDF File

Overview

isc Silicon NPN Power Transistor 2SC3588 DESCRIPTION ·Low Collector Saturation Voltage- VCE(sat)= 0.
5V(Max)@ IC= 300mA ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 400V(Min) ·Complement to Type 2SA1400 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high Voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 0.
5 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 2 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB=...

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