isc Silicon NPN Power Transistor
DESCRIPTION ·Low Collector Saturation
Voltage-
: VCE(sat)= 0.
4V(Max)@IC= 6A ·Good Linearity of hFE ·Complement to Type 2SA1452A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
80
V
VCEO
Collector-Emitter
Voltage
80
V
VEBO
Emitter-Base
Voltage
6
V
IC
Collector Current-Continuous
12
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
2
A
30
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC3710A
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