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2SC3710A

Toshiba Semiconductor
Part Number 2SC3710A
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Jul 19, 2006
Detailed Description www.DataSheet4U.com 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3710A High-Current Switchi...
Datasheet PDF File 2SC3710A PDF File

2SC3710A
2SC3710A

Overview
www.
DataSheet4U.
com 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3710A High-Current Switching Applications Unit: mm • • • Low collector saturation voltage: VCE (sat) = 0.
4 V (max) High-speed switching: tstg = 1.
0 µs (typ.
) Complementary to 2SA1452A Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 80 80 6 12 2 30 150 Unit V V V A A W JEDEC °C °C ― ― 2-10R1A DataSheet4U.
com −55 to 150 JEITA TOSHIBA DataShee Electrical Characteristic...


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