isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4386
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1671 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
160
V
VCEO
Collector-Emitter
Voltage
120
V
VEBO
Emitter-Base
Voltage
6
V
IC
Collector Current-Continuous
8
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
3
A
75
W
150
℃
...