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2SC4386


Part Number 2SC4386
Manufacturer Sanken Electric
Title TRANSISTOR
Description www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DataSheet 4 U .com ...
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2SC4381 : 2SC4381/4382 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1667/1668) Application : TV Vertical Output, Audio Output Driver and General Purpose sAbsolute maximum ratings (Ta=25°C) Ratings Symbol Unit 2SC4381 2SC4382 VCBO 150 200 V VCEO 150 200 V sElectrical Characteristics Symbol Conditions ICBO VCB= (Ta=25°C) Ratings 2SC4381 2SC4382 Unit 10max µA 150 200 V External Dimensions FM20(TO220F) 10.1±0.2 4.2±0.2 2.8 c0.5 4.0±0.2 16.9±0.3 8.4±0.2 VEBO 6 V IEBO VEB=6V 10max µA IC 2 A V(BR)CEO IC=25mA 150min 200min V IB 1 A hFE VCE=10V, IC=0.7A 60min ø3.3±0.2 a b 3.9 ±0.2 0.8±0.2 PC 25(Tc=25°C) W VCE(sat) IC=0.7A, IB=0.07A 1.

2SC4381 : ·With TO-220F package ·Complement to type 2SA1667/1668 APPLICATIONS ·For TV vertical output ,audio output driver and general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER 2SC4381 VCBO Collector-base voltage 2SC4382 2SC4381 VCEO Collector-emitter voltage 2SC4382 VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25 Open collector Open base 200 6 2 1 25 150 -55~150 V A A W Open emitter 200 150 V CONDITIONS VALUE 150 V UNIT www.datasheet4u.com SavantIC Semiconductor Product Specif.

2SC4381 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·DC Current Gain- : hFE= 60(Min)@ (VCE= 10V, IC= 0.7A) ·Complement to Type 2SA1667 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV vertical output ,audio output driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 1 A .

2SC4382 : 2SC4381/4382 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1667/1668) Application : TV Vertical Output, Audio Output Driver and General Purpose sAbsolute maximum ratings (Ta=25°C) Ratings Symbol Unit 2SC4381 2SC4382 VCBO 150 200 V VCEO 150 200 V sElectrical Characteristics Symbol Conditions ICBO VCB= (Ta=25°C) Ratings 2SC4381 2SC4382 Unit 10max µA 150 200 V External Dimensions FM20(TO220F) 10.1±0.2 4.2±0.2 2.8 c0.5 4.0±0.2 16.9±0.3 8.4±0.2 VEBO 6 V IEBO VEB=6V 10max µA IC 2 A V(BR)CEO IC=25mA 150min 200min V IB 1 A hFE VCE=10V, IC=0.7A 60min ø3.3±0.2 a b 3.9 ±0.2 0.8±0.2 PC 25(Tc=25°C) W VCE(sat) IC=0.7A, IB=0.07A 1.

2SC4382 : ·With TO-220F package ·Complement to type 2SA1667/1668 APPLICATIONS ·For TV vertical output ,audio output driver and general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER 2SC4381 VCBO Collector-base voltage 2SC4382 2SC4381 VCEO Collector-emitter voltage 2SC4382 VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25 Open collector Open base 200 6 2 1 25 150 -55~150 V A A W Open emitter 200 150 V CONDITIONS VALUE 150 V UNIT www.datasheet4u.com SavantIC Semiconductor Product Specif.

2SC4382 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·DC Current Gain- : hFE= 60(Min)@ (VCE= 10V, IC= 0.7A) ·Complement to Type 2SA1668 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV vertical output ,audio output driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 1 A .

2SC4383 : · ·Mold package that does not require an insulating board or insulation bushing ·High Speed Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This transistor is ideal for use in 50KHz class switching regulators. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A 2.5 W.

2SC4385 : ·With TO-3PML package ·Complement to type 2SA1670 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 120 80 6 6 3 60 150 -55~150 UNIT V V V A A W www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARA.

2SC4385 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1670 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn 1 isc .

2SC4386 : ·With TO-3PML package ·Complement to type 2SA1671 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 160 120 6 8 4 75 150 -55~150 UNIT V V V A A W www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PAR.

2SC4386 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1671 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 75 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn 1 i.

2SC4387 : ·With TO-3PML package ·Complement to type 2SA1672 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 200 140 6 10 4 80 150 -55~150 UNIT V V V A A W www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PA.

2SC4387 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1672 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn 1 .

2SC4388 : 2SC4388 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1673) Application : Audio and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO 200 V VCEO 180 V VEBO 6 V IC 15 A IB 4 A PC 85(Tc=25°C) W Tj 150 °C Tstg –55 to +150 °C sElectrical Characteristics (Ta=25°C) Symbol Conditions Ratings Unit ICBO IEBO V(BR)CEO hFE VCE(sat) VCB=200V VEB=6V IC=50mA VCE=4V, IC=3A IC=5A, IB=0.5A 10max µA 10max µA 180min V 50min∗ 2.0max V fT VCE=12V, IE=–0.5A 20typ MHz COB VCB=10V, f=1MHz 300typ pF ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC RL I.

2SC4388 : ·With TO-3PML package ·Complement to type 2SA1673 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 200 180 6 15 4 85 150 -55~150 UNIT V V V A A W www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PA.

2SC4388 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1673 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 85 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn 1 .




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