PRELIMINARY DATA SHEET
SILICON TRANSISTOR
2SC5435
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
FEATURE
• Ultra super mini-mold thin flat package (1.
4 mm × 0.
8 mm × 0.
59 mm: TYP.
) • Contains same chip as 2SC5010
PACKAGE DIMENSIONS (in mm)
1.
4 ± 0.
05 0.
8 ± 0.
1
1.
4 ± 0.
1 (0.
9) 0.
45 0.
45
0.
2 +0.
1 –0
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER Collector to Base
Voltage Collector to Emitter
Voltage Emitter to Base
Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT Tj Tstg RATING 9 6 2 30 125 150 –65 to +150 UNIT V V
TK
3
1
mW °C °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER Col...