Power Transistors
2SD1258
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
10.
0±0.
3 1.
5±0.
1
8.
5±0.
2 6.
0±0.
5 3.
4±0.
3
Unit: mm
1.
0±0.
1
s Features
q q q
1.
5max.
1.
1max.
High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment.
(TC=25˚C)
Ratings 200 150 6 2.
5 1 0.
1 40 1.
3 150 –55 to +150 Unit V V
10.
5min.
2.
0
0.
8±0.
1
0.
5max.
2.
54±0.
3 5.
08±0.
5 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage...