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2SD1259A

Panasonic Semiconductor
Part Number 2SD1259A
Manufacturer Panasonic Semiconductor
Description Silicon NPN triple diffusion Transistor
Published Apr 3, 2005
Detailed Description Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type For power amplification with high forward ...
Datasheet PDF File 2SD1259A PDF File

2SD1259A
2SD1259A

Overview
Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio 10.
0±0.
3 8.
5±0.
2 6.
0±0.
5 3.
4±0.
3 Unit: mm 1.
0±0.
1 s Features q q q High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment.
(TC=25˚C) Ratings 80 100 60 80 6 6 3 1 40 1.
3 150 –55 to +150 Unit V 1.
5±0.
1 1.
5max.
1.
1max.
10.
5min.
2.
0 0.
8±0.
1 0.
5max.
2.
54±0.
3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1259 2SD1259A 2SD1259 Symbol VCBO VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg 5.
08±0.
5 1 2 3 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.
4±0.
3 1.
0±0.
1 8.
5±0.
2 6.
0±0.
3 1.
5–0.
4 Peak collector current Collector current Base current Collector power TC=25°C dissipation Junction temperature Storage temperature A 2.
0 3.
0–0.
2 A A 4.
4±0.
5 0.
8±0.
1 2.
54±0.
3 R0.
5 R0.
5 1.
1 max.
0 to 0.
4 5.
08±0.
5 W 1 2 3 ˚C ˚C 1:Base 2:Collector 3:Emitter N Type Package (DS) s Electrical Characteristics Parameter Collector cutoff current 2SD1259 2SD1259A (TC=25˚C) Symbol ICES ICEO IEBO Conditions VCE = 80V, IE = 0 VCE = 100V, IE = 0 VCE = 40V, IB = 0 VCB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 0.
5A IC = 2A, IB = 0.
05A VCE = 12V, IC = 0.
2A, f = 10MHz 50 60 80 500 2500 1 V MHz min typ max 100 100 100 100 Unit µA µA µA V Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1259 2SD1259A VCEO hFE* VCE(sat) fT Forward current transfer ratio Collector to emitter saturation voltage Transition frequency *h FE Rank classification Q P O hFE 500 to 1000 800 to 1500 1200 to 2500 Rank Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 1500) in the rank classification.
4.
4±0.
5 14.
7±0.
5 Emitter to base voltage V 10.
0±0.
3 emitter voltage 2SD1259A V +0.
4 +0 1 Power Transistors...


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