NPN Transistor
: SILICON NPN TRIPLE DIFFUSED TYPE * 2SD1412 HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm 10.3MAX. 7.0 03.2±O.2 FEATURES . Low Saturation Voltage : VcE(sat)=0.4V(Max. ) . Complementary to 2SB1019 at Ic=4A MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMB...
Toshiba