2SD2204
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2204
High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications
Unit: mm
• •
High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 1.
5 A) Low saturation
voltage: VCE (sat) = 1.
5 V (max) (IC = 1.
5 A)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics S Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC I Pulse I ymbol VCBO VCEO VEBO
C CP
Rating 65 ± 10 65 ± 10 7 4 6 0.
5 2.
0 25
Unit V V V A A W °C
IB PC Tj 150 Tstg
JEDEC JEITA TOSHIBA
― SC-67 2-10R1A
−5...