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2SD2209

Part Number	2SD2209
Manufacturer	Panasonic
Description	Silicon NPN Transistor
Published	May 5, 2014
Detailed Description	Power Transistors 2SD2209 Silicon NPN triple diffusion planar type Darlington 7.0±0.3 3.5±0.2 Unit: mm For power ampl...
Datasheet	2SD2209 PDF File

Overview

Power Transistors 2SD2209 Silicon NPN triple diffusion planar type Darlington 7.
0±0.
3 3.
5±0.
2 Unit: mm For power amplification and switching 7.
2±0.
3 0.
8±0.
2 3.
0±0.
2 1.
0±0.
2 M Di ain sc te on na tin nc ue e/ d q I type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment.
10.
0 –0.
+0.
3 s Features 1.
1±0.
1 0.
75±0.
1 0.
85±0.
1 0.
4±0.
1 2.
3±0.
2 4.
6±0.
4 2 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC 100±15 100±15 5 8 4 1 3 Ratings Unit V V V A A 1:Base 2:Collector 3:Emitter I Type Package Unit: mm 0 to 0.
15 Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature PC Tj Tstg s Electrical Characteristics (TC=25˚C) Parameter Symbol ICBO IEBO hFE1 Collector cutoff current Emitter cutoff current Collector to emitter voltage ea s ht e v tp is :// it pa fo na llo so win ni g c.
U co R .
jp L a /s bo em u ic t la on te /e st -in in de for x .
ma ht t m ion l .
7.
0±0.
3 3.
5±0.
2 2.
0±0.
2 3.
0±0.
2 1.
0 max.
10.
2±0.
3 7.
2±0.
3 1.
0 1.
0 Collector to base voltage 15 1.
3 W 2.
5 1.
1±0.
1 0.
75±0.
1 0.
5 max.
0.
9±0.
1 150 ˚C ˚C 0 to 0.
15 1 2 3 –55 to +150 2.
3±0.
2 4.
6±0.
4 1:Base 2:Collector 3:Emitter I Type Package (Y) Conditions min typ max 100 2 Unit µA VCB = 85V, IE = 0 VEB = 5V, IC = 0 IC = 5mA, IB = 0 mA V VCEO 85 115 Forward current transfer ratio VCE = 3V, IC = 0.
5A VCE = 3V, IC = 3A IC = 3A, IB = 12mA IC = 5A, IB = 20mA IC = 3A, IB = 12mA 1000 1000 hFE2*1 10000 2 4 Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Energy handling capability VCE(sat) VBE(sat) fT ton tstg tf Es/b*2 Pl 2.
5 VCE = 10V, IC = 0.
5A, f = 1MHz IC = 3A, IB1 = 12mA, IB2 = –12mA, VCC = 50V IC = 1A, L = 100mH, RBE = 100Ω *2E s/b 20 0.
3 3.
0 1.
0 50 L coil MHz µs µs...

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