Power Transistors
2SD2453
Silicon NPN triple diffusion planar type
Unit: mm
For high current transfer ratio and power amplification ■ Features
• High forward current transfer ratio hFE • Low collector-emitter saturation
voltage VCE(sat)
6.
5±0.
1 5.
3±0.
1 4.
35±0.
1
2.
3±0.
1 0.
5±0.
1
7.
3±0.
1
1.
8±0.
1
0.
8 max.
2.
5±0.
1
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base
voltage (Emitter open) Collector-emitter
voltage (Base open) Emitter-base
voltage (Collector open) Collector current Peak collector current * Base current Collector power dissipation Junction temperature Storage temperature Note) Non-repetitive peak collector current Tj Tstg TC = 25°C Symbol VCBO VCEO VEBO IC ICP IB ...