Transistor
2SD2457
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
s Features
q q q
4.
5±0.
1 1.
6±0.
2
1.
5±0.
1
1.
0–0.
2
+0.
1
High collector to emitter
voltage VCEO.
Large collector power dissipation PC.
Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
2.
6±0.
1
0.
4max.
45°
0.
4±0.
08 0.
5±0.
08 1.
5±0.
1
4.
0–0.
20
0.
4±0.
04
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
3.
0±0.
15
(Ta=25˚C)
Rati...