TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SD2481
Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
2SD2481
Unit: mm
· High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) · Low saturation
voltage: VCE (sat) = 1.
5 V (max) (IC = 1 A, IB = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
30 30 10 1.
5 0.
15 1.
3 150 −55 to 150
Unit
V V V A A W °C °C
Equivalent Circuit
BASE
COLLECTOR
JEDEC
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