2SD795

isc Silicon NPN Power Transistor 2SD795 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.7V(Max) @IC= 2.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed switching appli...