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2SD798

Toshiba
Part Number 2SD798
Manufacturer Toshiba
Description NPN Transistor
Published Jul 16, 2018
Detailed Description : SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) . 2SD798 IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIO...
Datasheet PDF File 2SD798 PDF File

2SD798
2SD798

Overview
: SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) .
2SD798 IGNITER APPLICATIONS.
HIGH VOLTAGE SWITCHING APPLICATIONS.
FEATURES • High DC Current Gain : hFE=1500 (Min.
)(V CE=2V, I C=2A) INDUSTRIAL APPLICATIONS Unit in mm IQ.
SMAX.
, ,03.
6±a.
2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO v EBO ic IB PC T J Tstg RATING UNIT 600 V 300 V 5V 6A 1A 30 W 150 -55^150 °C °C 2.
54 2.
54 d P' J-.
?c X ^ .
L BASE 2.
COLLECTOR (HEAT SINK) 3.
EMITTER EQUIVALENT CIRCUIT =s2kn ! COLLECTOR EMITTER TO — 220 AI SC — 46 2 — 10A 1 A Mounting Kit No.
AC75 Weight : 1.
9g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current SYMBOL ICBO lEBO TEST CONDITION Vcb=600v > I E=0 VEB=5V, I C=0 MIN.
TYP.
MAX.
UNIT - - 0.
5 mA - - 0.
5 ...


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