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Ordering number : ENN7625
2SJ652
P-Channl Silicon
MOSFET
2SJ652
General-Purpose Switching Device Applications
Features
• • • •
Package Dimensions
unit : mm 2063A
[2SJ652]
10.
0 3.
2
3.
5 7.
2
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC converter.
4.
5 2.
8
18.
1
16.
0
5.
6
14.
0
1.
6 1.
2 0.
75
2.
4 0.
7
2.
55
1 2 3 2.
55
2.
4
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions
1 : Gate 2 : Drain 3 : So...