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2SJ658

Sanyo Semicon Device
Part Number 2SJ658
Manufacturer Sanyo Semicon Device
Description High-Speed Switching Applications
Published Mar 21, 2007
Detailed Description www.DataSheet4U.com Ordering number : ENN7552 2SJ658 P-Channel Silicon MOSFET 2SJ658 High-Speed Switching Application...
Datasheet PDF File 2SJ658 PDF File

2SJ658
2SJ658


Overview
www.
DataSheet4U.
com Ordering number : ENN7552 2SJ658 P-Channel Silicon MOSFET 2SJ658 High-Speed Switching Applications Features • • • Package Dimensions unit : mm 2178 [2SJ658] 5.
0 4.
0 4.
0 Low ON-resistance.
High-speed switching.
2.
5V drive.
0.
45 0.
5 0.
6 2.
0 5.
0 0.
45 0.
44 1 2 3 14.
0 1 : Source 2 : Drain 3 : Gate 1.
3 1.
3 SANYO : NP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings -20 ±10 --2 --8 0.
7 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Symbol V(BR)DSS IDSS Conditions ID=--1mA, VGS=0 VDS=-20V, VGS=0 Ratings min --20 --10 typ max Unit V µA Continued on next page.
Any and all SANYO products described or contained he...



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