2SK3147(L),2SK3147(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-731 (Z) 1st.
Edition February 1999 Features
• Low on-resistance R DS = 0.
1 Ω typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
DPAK–2
4
4
D 2 1 2 G 1 3
3 S
1 2
3
1.
Gate 2.
Drain 3.
Source 4.
Drain
2SK3147(L),2SK3147(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note3 Note3 Note2 Note1
Ratings 100 ±20 5 2...