2SK3371
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)
2SK3371
Switching Regulator Applications
Unit: mm
Features
• • • • Low drain-source ON-resistance: RDS (ON) = 6.
4 Ω (typ.
) High forward transfer admittance: |Yfs| = 0.
85 S (typ.
) Low leakage current: IDSS = 100 μA (max) (VDSS = 600 V) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
com Characteristic
Drain-source
voltage Drain-gate
voltage (RGS = 20 kΩ) Gate-source
voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 1 2 20 56 1 2 150 −55 to 150 Unit V V V A
JEDEC
W mJ A mJ °C °C
...