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2SK3376MFV

Part Number	2SK3376MFV
Manufacturer	Toshiba Semiconductor
Description	N-Channel MOSFET
Published	Apr 11, 2008
Detailed Description	2SK3376MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376MFV For ECM • Application for Ultra-c...
Datasheet	2SK3376MFV PDF File

Overview

2SK3376MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376MFV For ECM • Application for Ultra-compact ECM 0.
22±0.
05 1.
2±0.
05 0.
32±0.
05 3 2 0.
13±0.
05 0.
8±0.
05 Unit: mm Absolute Maximum Ratings (Ta=25°C) Characteristic Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature Storage temperature range Symbol VGDO IG PD (Note 1) Tj Tstg Rating -20 10 150 125 −55~125 Unit 1.
2±0.
05 0.
8±0.
05 V mA mW °C °C 0.
4 1 www.
DataSheet4U.
com Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability sign...

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2SK3376MFV N-Channel MOSFET - Toshiba Semiconductor

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