2SK3669
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VII)
2SK3669
Switching Regulator, Audio Amplifier and Motor Drive Applications
• • • Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ.
) High forward transfer admittance: |Yfs| = 6 S (typ.
) Low leakage current: IDSS = 100 μA (max) (VDS = 100 V) Unit: mm
• Enhancement mode : Vth = 3.
0 to 5.
0 V (VDS = 10 V, ID = 1 mA) com
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source
voltage Drain-gate
voltage (RGS = 20 kΩ) Gate-source
voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP IDP PD EAS IAR (Note 3) Channel temperature Storage temperature range EAR Tch Tstg Rating 100 100 ±2...