DatasheetsPDF.com

2SK3667

Toshiba Semiconductor
Part Number 2SK3667
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 23, 2007
Detailed Description 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3667 Switching Regulator Applications •...
Datasheet PDF File 2SK3667 PDF File

2SK3667
2SK3667

Overview
2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3667 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.
75Ω (typ.
) High forward transfer admittance: |Yfs| = 5.
5S (typ.
) Low leakage current: IDSS = 100μA (VDS = 600 V) Enhancement mode: Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 7.
5 30 45 189 7.
5 4.
5 150 -55~150 A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Unit V V V Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) www.
DataSheet4U.
com Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-67 2-10U1B Weight : 1.
7 g (typ.
) Thermal Characteristics Characteristics Thermal resis...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)