2SK3842
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
2SK3842
Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
• • • • Low drain-source ON resistance: RDS (ON) =4.
6 mΩ (typ.
) High forward transfer admittance: |Yfs| = 93 S (typ.
) Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) Enhancement model: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm
www.
DataSheet4U.
com
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source
voltage Drain-gate
voltage (RGS = 20 kΩ) Gate-source
voltage DC Drain current (Note 1) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive ava...