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2SK3846

Toshiba Semiconductor
Part Number 2SK3846
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published May 21, 2008
Detailed Description 2SK3846 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U−MOSIII) 2SK3846 Switching Regulator, DC/DC Conver...
Datasheet PDF File 2SK3846 PDF File

2SK3846
2SK3846

Overview
2SK3846 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U−MOSIII) 2SK3846 Switching Regulator, DC/DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance : RDS (ON) = 12 mΩ (typ.
) : |Yfs| = 33 S (typ.
) Unit: mm z Low leakage current : IDSS = 100 μA (max) (VDS = 40 V) z Enhancement mode : Vth = 1.
5~2.
5 V (VDS = 10 V, ID = 1 mA) www.
DataSheet4U.
com Maximum Ratings (Ta = 25°C) Characteristic Drain–source voltage Drain–gate voltage (RGS = 20 kΩ) Gate–source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 40 40 ±20 26 78 25 63 26 2.
5 150 −55~150 Unit V V V A A W mJ A mJ °C °C Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-67 2-10R1B Weight: 1.
9 g (typ.
) Thermal Characteristics Characteristic Thermal resist...


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