2SK4059TV
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK4059TV
For ECM
• Application for Ultra-compact ECM
0.
2±0.
05 1.
2±0.
05 0.
3±0.
05 3 0.
8±0.
05
Unit: mm
1.
2±0.
05
0.
8±0.
1
Absolute Maximum Ratings (Ta=25°C)
com
Characteristic Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 −55~125 Unit V mA mW °C °C
0.
4
1 2
Gate-Drain
voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature Storage temperature range
0.
4
0.
28±0.
02
Note:
Using continuously under heavy loads (e.
g.
the application of high temperature/current/
voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significan...