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2SK4059TK

Part Number	2SK4059TK
Manufacturer	Toshiba Semiconductor
Description	Silicon N-Channel MOS Type FET
Published	Oct 7, 2008
Detailed Description	2SK4059TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TK For ECM • Application for compact E...
Datasheet	2SK4059TK PDF File

Overview

2SK4059TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TK For ECM • Application for compact ECM 0.
22±0.
05 1.
2±0.
05 0.
8±0.
05 0.
32±0.
05 3 2 0.
1±0.
05 Unit: mm Absolute Maximum Ratings (Ta=25°C) 0.
45 0.
45 1.
4±0.
05 www.
DataSheet4U.
com Characteristic Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 −55~125 Unit V mA mW °C Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature Storage temperature range Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
0.
395±0.
03 °C 0.
9±0.
1 1 TESM3 1.
Drain 2.
Source 3.
Gate 2-1R1A JEDEC JEITA TOSHIBA Weight: 2.
2mg (typ.
) IDSS CLASSIFICATION A-Rank 140~240µA B-Rank 210~350µA BK-Rank 210~400µA C-Rank 320~500µA Marking Type Name Equivalent Circuit D 8 IDSS Classification Symbol A :A -Rank B :B-Rank BK-Rank C :C-Rank G S 1 2007-11-01 2SK4059TK Electrical Characteristics (Ta=25°C) Characteristic Symbol Test Condition A Drain Current IDSS VDS = 2 V, VGS = 0 B BK C A Drain Current www.
DataSheet4U.
com ID VDD = 2 V, RL= 2.
2kΩ,Cg = 5pF B BK C Gate-Source Cut-off Voltage Forward transfer admittance Gate-Drain Voltage Input capacitance VGS(OFF) VDS = 2 V, ID = 1μA |Yfs| VDS = 2 V,VGS = 0V Min 140 210 210 320 125 190 190 290 -0.
1 1.
35 -20 ⎯ A Voltage Gain Gv VDD = 2V, RL= 2.
2kΩ,Cg = 5pF, f = 1kHz,vin=100mV B BK C Delta Voltage Gain DGv(f) VDD = 2V, RL= 2.
2kΩ,Cg = 5pF,f = 1kHz~100Hz,vin=100mV A Delta Voltage Gain DGv(V) VDD = 2V~1.
...

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